Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm

Document Details

Document Type
Pub Defense Publication
Publication Date
Aug 01, 2019
Source ID
10.1109/led.2019.2923902

Entities

People

  • Hironori Okumura
  • Iurii Kim
  • Jori Lemettinen
  • Nadim Chowdhury
  • Sami Suihkonen
  • Tomás Palacios

Organizations

  • Defense Advanced Research Projects Agency
  • Japan Society for the Promotion of Science