Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/$R_{\text{on,sp}}$ of up to 0.95 GW/cm2

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2020
Source ID
10.1109/led.2019.2953559

Entities

People

  • Debdeep Jena
  • Huili Grace Xing
  • Kazuki Nomoto
  • Wenshen Li
  • Zongyang Hu

Organizations

  • Air Force Office of Scientific Research
  • National Science Foundation