Hf0.5Zr0.5O2-Based Ferroelectric Gate HEMTs With Large Threshold Voltage Tuning Range

Document Details

Document Type
Pub Defense Publication
Publication Date
Mar 01, 2020
Source ID
10.1109/led.2020.2965330

Entities

People

  • Benjamin Grisafe
  • Chunlei Wu
  • Hansheng Ye
  • Jeffrey D. Smith
  • Nikhita Shaju
  • Patrick Fay
  • Suman Datta

Organizations

  • Defense Advanced Research Projects Agency
  • Semiconductor Research Corporation