SrSnO3 Field-Effect Transistors With Recessed Gate Electrodes
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 01, 2020
- Source ID
- 10.1109/led.2020.3011058
Entities
People
- Bharat Jalan
- Fengdeng Liu
- Steven J Koester
- Tristan K. Truttmann
- V. R. Saran Kumar Chaganti
Organizations
- Air Force Office of Scientific Research
- Division of Electrical, Communications & Cyber Systems
- Division of Materials Research