Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

Document Details

Document Type
Pub Defense Publication
Publication Date
Dec 01, 2020
Source ID
10.1109/led.2020.3029619

Entities

People

  • David W. Snyder
  • Jianan Song
  • Joan Redwing
  • Robert M. Lavelle
  • Rongming Chu
  • Sang Ha Yoo
  • Sangwoo Han
  • Thomas N. Jackson
  • Ziguang Ma

Organizations

  • ARPA-E
  • Air Force Office of Scientific Research