Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles

Document Details

Document Type
Pub Defense Publication
Publication Date
Jul 01, 2021
Source ID
10.1109/led.2021.3083219

Entities

People

  • Ava J. Tan
  • Chenming Hu
  • Jong-Ho Bae
  • Li-Chen Wang
  • Nirmaan Shanker
  • Sayeef Salahuddin
  • Yu-Hung Liao