Reduced HfO₂ Resistive Memory Variability by Inserting a Thin SnO₂ as Oxygen Stopping Layer

Document Details

Document Type
Pub Defense Publication
Publication Date
Dec 01, 2021
Source ID
10.1109/led.2021.3124290

Entities

People

  • H-S Philip Wong
  • Shengjun Qin
  • Wei-Chen Chen
  • Zhouchangwan Yu

Organizations

  • Defense Advanced Research Projects Agency
  • Semiconductor Research Corporation