A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current

Document Details

Document Type
Pub Defense Publication
Publication Date
Nov 01, 2022
Source ID
10.1109/led.2022.3210005

Entities

People

  • Adam Charnas
  • Ali Shakouri
  • Haiyan Wang
  • Hongyi Dou
  • Jesse Maassen
  • Mark S. Lundstrom
  • Mengwei Si
  • Pai-Ying Liao
  • Peide Ye
  • Sami Alajlouni
  • Vahid Askarpour
  • Zehao Lin
  • Zhongxia Shang
  • Zhuocheng Zhang

Organizations

  • Air Force Office of Scientific Research
  • Compute Canada
  • Dalhousie University
  • Natural Sciences and Engineering Research Council
  • Purdue University
  • Semiconductor Research Corporation