GaN Memory Operational at 300 °C

Document Details

Document Type
Pub Defense Publication
Publication Date
Dec 01, 2022
Source ID
10.1109/led.2022.3218671

Entities

People

  • John Niroula
  • Mengyang Yuan
  • Nadim Chowdhury
  • Qingyun Xie
  • Tomás Palacios

Organizations

  • Air Force Office of Scientific Research
  • Lockheed Martin
  • Massachusetts Institute of Technology
  • National Aeronautics and Space Administration
  • University of Engineering and Technology, Peshawar