Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage

Document Details

Document Type
Pub Defense Publication
Publication Date
Dec 01, 2022
Source ID
10.1109/led.2022.3218749

Entities

People

  • A F M Anhar Uddin Bhuiyan
  • David Eason
  • Hongping Zhao
  • Lingyu Meng
  • Shivam Sharma
  • Uttam Singisetti
  • Zixuan Feng

Organizations

  • Air Force Office of Scientific Research
  • Glenn Research Center
  • National Science Foundation
  • Ohio State University
  • University at Buffalo