Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation

Document Details

Document Type
Pub Defense Publication
Publication Date
Jul 01, 2023
Source ID
10.1109/led.2023.3279813

Entities

People

  • Abdullah Jubair Bin Iqbal
  • Bejoy Sikder
  • Debbie G Senesky
  • Gary W. Hunter
  • John Niroula
  • Kai Fu
  • Mengyang Yuan
  • Minsik Oh
  • Mohamed Fadil Isamotu
  • Nadim Chowdhury
  • Nitul S. Rajput
  • Qingyun Xie
  • Sagar Kumar Das
  • Savannah Eisner
  • Shisong Luo
  • Tomás Palacios
  • Yuji Zhao

Organizations

  • ARPA-E
  • Air Force Office of Scientific Research
  • Glenn Research Center
  • Johns Hopkins University
  • Lockheed Martin
  • Massachusetts Institute of Technology
  • National Aeronautics and Space Administration
  • Qualcomm
  • Rice University
  • Samsung Group
  • Stanford University
  • Technology Innovation Institute
  • University of Engineering and Technology, Peshawar