Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm)

Document Details

Document Type
Pub Defense Publication
Publication Date
Oct 01, 2023
Source ID
10.1109/led.2023.3310910

Entities

People

  • Can Bayram
  • Zhuoran Han

Organizations

  • Air Force Office of Scientific Research
  • Office of Naval Research
  • University of Illinois Urbana–Champaign