N-Polar GaN HEMTs in a High-Uniformity 100-mm Wafer Process With 43.6% Power-Added Efficiency and 2 W/mm at 94 GHz

Document Details

Document Type
Pub Defense Publication
Publication Date
Jul 01, 2023
Source ID
10.1109/lmwt.2023.3263058

Entities

People

  • Andrea Arias-Purdue
  • Andres Paniagua
  • Andrew D. Carter
  • Casey M. King
  • Daniel J. Green
  • Florian Herrault
  • James F. Buckwalter
  • Josh Bergman
  • K. Shinohara
  • Michael Elliott
  • Miguel Urteaga
  • Nicholas C. Miller
  • Petra V. Rowell
  • Ryan Gilbert

Organizations

  • Air Force Research Laboratory
  • KBR, Inc.
  • Office of Naval Research
  • Teledyne Technologies