Impact of Switching Variability, Memory Window, and Temperature on Vector Matrix Operations Using 65nm CMOS Integrated Hafnium Dioxide-based ReRAM Devices
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 23, 2022
- Source ID
- 10.1109/mdts54894.2022.9826924
Entities
People
- Karsten Beckmann
- Maximilian Liehr
- Nathaniel C Cady
Organizations
- Air Force Research Laboratory
- SUNY Polytechnic Institute