Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs

Document Details

Document Type
Pub Defense Publication
Publication Date
Sep 01, 2015
Source ID
10.1109/tdmr.2015.2442152

Entities

People

  • Blair Tuttle
  • Cher Xuan Zhang
  • Daniel M. Fleetwood
  • Dimitri Linten
  • En Xia Zhang
  • Guo Xing Duan
  • Jacopo Franco
  • Jerome Mitard
  • Jordan Hatchtel
  • Liesbeth Witters
  • Matthew F. Chisholm
  • Nadine Collaert
  • Robert A. Reed
  • Ronald D. Schrimpf
  • Sokrates T. Pantelides
  • Xiao Shen

Organizations

  • Air Force Office of Scientific Research
  • Air Force Research Laboratory
  • Defense Threat Reduction Agency
  • Office of Basic Energy Sciences
  • United States Department of Energy