Effect of Gate Insulator Thickness on RF Power Gain Degradation of Vertically Scaled GaN MIS-HEMTs at 40 GHz
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 01, 2015
- Source ID
- 10.1109/tdmr.2015.2467161
Entities
People
- Brian P. Downey
- D. Scott Katzer
- David J. Meyer
- Jason A. Roussos
- Mario G. Ancona
- Ming Pan
- Xiang Gao
Organizations
- Office of Naval Research