Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors Under Low Gate-Field Stress—Part II: Optimization of Fabrication Conditions and Gate Voltage Dependence

Document Details

Document Type
Pub Defense Publication
Publication Date
Jun 01, 2016
Source ID
10.1109/tdmr.2016.2524626

Entities

People

  • James C. Sturm
  • Levent E. Aygun
  • Sigurd Wagner
  • Ting Liu

Organizations

  • Air Force Office of Scientific Research
  • Industrial Technology Research Institute
  • National Science Foundation
  • United States Department of Energy