Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors Under Low Gate-Field Stress—Part I: Two-Stage Model for Lifetime Prediction

Document Details

Document Type
Pub Defense Publication
Publication Date
Jun 01, 2016
Source ID
10.1109/tdmr.2016.2526498

Entities

People

  • J. C. Sturm
  • L. E. Aygun
  • Samuel G. Wagner
  • T. Liu

Organizations

  • Air Force Office of Scientific Research
  • Industrial Technology Research Institute
  • National Science Foundation
  • United States Department of Energy