Impact Ionization and Interface Trap Generation in 28-nm MOSFETs at Cryogenic Temperatures
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 01, 2018
- Source ID
- 10.1109/tdmr.2018.2865190
Entities
People
- Han Wang
- Hugh Barnaby
- Ivan Sanchez Esqueda
- Xiaodong Yan
Organizations
- Defense Advanced Research Projects Agency