Immediate Read-After-Write Capability in p-Type Ferroelectric Field-Effect Transistors and Its Evolution With Fatigue Cycling
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 01, 2023
- Source ID
- 10.1109/tdmr.2023.3240319
Entities
People
- Asif Islam Khan
- Hang Chen
- Nujhat Tasneem
- Shimeng Yu
- Winston Chern
- Zheng Wang
Organizations
- Defense Advanced Research Projects Agency
- Georgia Tech
- Semiconductor Research Corporation