Asymmetric Underlapped Sub-10-nm n-FinFETs for High-Speed and Low-Leakage 6T SRAMs
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 01, 2016
- Source ID
- 10.1109/ted.2015.2512227
Entities
People
- A. Arun Goud
- Anand Raghunathan
- Kaushik Roy
- Rangharajan Venkatesan
Organizations
- Defense Advanced Research Projects Agency