Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructure

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2017
Source ID
10.1109/ted.2016.2631148

Entities

People

  • Charng-gan Tu
  • Chia-ying Su
  • Chih-Chung Yang
  • Chun-han Lin
  • Hao-tsung Chen
  • Yean-woei Kiang
  • Yu-feng Yao
  • Yuh-Renn Wu

Organizations

  • Air Force Office of Scientific Research
  • National Science and Technology Council
  • National Taiwan University

Tags

Technology Areas

  • Microelectronics