Analyzing the Effect of High-k Dielectric-Mediated Doping on Contact Resistance in Top-Gated Monolayer MoS2 Transistors
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 01, 2018
- Source ID
- 10.1109/ted.2018.2866772
Entities
People
- Abdullah Alharbi
- Davood Shahrjerdi
Organizations
- Army Research Office
- Brookhaven National Laboratory
- National Science Foundation