Guiding Principles for Trench Schottky Barrier Diodes Based on Ultrawide Bandgap Semiconductors: A Case Study in Ga₂O₃
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 01, 2020
- Source ID
- 10.1109/ted.2020.3003292
Entities
People
- Debdeep Jena
- Huili Grace Xing
- Kazuki Nomoto
- Wenshen Li
- Zongyang Hu
Organizations
- Air Force Office of Scientific Research
- Division of Electrical, Communications & Cyber Systems
- Division of Materials Research
- National Science Foundation