A New Technique for Mobility Extraction in MOSFETs in the Presence of Prominent Gate Oxide Trapping: Application to InGaAs MOSFETs

Document Details

Document Type
Pub Defense Publication
Publication Date
Aug 01, 2020
Source ID
10.1109/ted.2020.3003844

Entities

People

  • Alon Vardi
  • Jesús A. del Alamo
  • Jesús Grajal
  • Xiaowei Cai

Organizations

  • Defense Threat Reduction Agency
  • Division of Electrical, Communications & Cyber Systems
  • Korea Institute of Science and Technology
  • Lam Research