Developing 13-kV 4H-SiC MOSFETs: Significance of Implant Straggle, Channel Design, and MOS Process on Static Performance

Document Details

Document Type
Pub Defense Publication
Publication Date
Oct 01, 2020
Source ID
10.1109/ted.2020.3017150

Entities

People

  • Adam J. Morgan
  • Aivars J. Lelis
  • Anant Agarwal
  • Dongyoung Kim
  • Justin Lynch
  • Minseok Kang
  • Nick Yun
  • Ronald Green
  • Woongje Sung

Organizations

  • Office of Naval Research
  • United States Army Research Laboratory