Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 01, 2020
- Source ID
- 10.1109/ted.2020.3025268
Entities
People
- Arkka Bhattacharyya
- Saurav Roy
- Sriram Krishnamoorthy
Organizations
- Air Force Office of Scientific Research
- National Science Foundation