Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High-k Bismuth Zinc Niobate Oxide
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 01, 2021
- Source ID
- 10.1109/ted.2021.3084136
Entities
People
- Andy Xie
- Caiyu Wang
- Cathy Lee
- Edward Beam
- Hao Xue
- Hao Yang
- Junao Cheng
- Mohammad Wahidur Rahman
- Shahadat H. Sohel
- Siddharth Rajan
- Wu Lu
- Yu Cao