AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity

Document Details

Document Type
Pub Defense Publication
Publication Date
Nov 01, 2023
Source ID
10.1109/ted.2023.3311422

Entities

People

  • Bejoy Sikder
  • Eiji Yagyu
  • Koon Hoo Teo
  • Md. Tasnim Azad
  • Mengyang Yuan
  • Nadim Chowdhury
  • Qingyun Xie
  • Toiyob Hossain
  • Tomás Palacios

Organizations

  • Air Force Office of Scientific Research
  • Bangladesh University of Engineering and Technology
  • Massachusetts Institute of Technology
  • Mitsubishi Electric
  • University of Engineering and Technology, Peshawar

Tags

Technology Areas

  • Microelectronics