Bias Dependence of Total Ionizing Dose Effects in SiGe-MOS FinFETs

Document Details

Document Type
Pub Defense Publication
Publication Date
Dec 01, 2014
Source ID
10.1109/tns.2014.2362918

Entities

People

  • Chadwin D Young
  • Cher Xuan Zhang
  • Daniel M. Fleetwood
  • En Xia Zhang
  • Gennadi Bersuker
  • Guo Xing Duan
  • Jordan A Hachtel
  • Michael L. Alles
  • Robert A. Reed
  • Ronald D. Schrimpf
  • Sokrates T. Pantelides

Organizations

  • Air Force Office of Scientific Research
  • National Science Foundation