Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2017
Source ID
10.1109/tns.2016.2620993

Entities

People

  • Daniel M. Fleetwood
  • En Xia Zhang
  • Jingyun Zhang
  • Kai Ni
  • Maruf Bhuiyan
  • Mengwei Si
  • Peide Ye
  • Robert A. Reed
  • Rong Jiang
  • Roy G. Gordon
  • Shufeng Ren
  • T. P. Ma
  • Xiabing Lou
  • Xian Gong
  • Xin Wan

Organizations

  • Defense Threat Reduction Agency
  • National Science Foundation
  • United States Department of Energy