Gate Bias and Geometry Dependence of Total-Ionizing-Dose Effects in InGaAs Quantum-Well MOSFETs
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2017
- Source ID
- 10.1109/tns.2016.2623492
Entities
People
- Daniel M. Fleetwood
- En Xia Zhang
- Jesús A. del Alamo
- Jianqiang Lin
- Kai Ni
- Michael L. Alles
- Robert A. Reed
- Ronald D. Schrimpf
Organizations
- Defense Threat Reduction Agency