Total Ionizing Dose (TID) Effects in Ultra-Thin Body Ge-on-Insulator (GOI) Junctionless CMOSFETs With Recessed Source/Drain and Channel
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2017
- Source ID
- 10.1109/tns.2016.2624294
Entities
People
- Daniel M. Fleetwood
- En Xia Zhang
- Heng Wu
- Kai Ni
- Maruf Bhuiyan
- Peide Ye
- Robert A. Reed
- Rong Jiang
- Shufeng Ren
- T. P. Ma
Organizations
- Defense Threat Reduction Agency
- National Science Foundation