Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2018
Source ID
10.1109/tns.2017.2774928

Entities

People

  • Chul-ho Won
  • Daniel M. Fleetwood
  • En Xia Zhang
  • Hong Zhou
  • Huiqi Gong
  • Jong-won Lim
  • Jung‐Hee Lee
  • Maruf Bhuiyan
  • Peide Ye
  • Robert A. Reed
  • Rong Jiang
  • Roy G. Gordon
  • Sung‐Jae Chang
  • Tso-ping Ma
  • Xiabing Lou
  • Xian Gong

Organizations

  • Air Force Office
  • Defense Threat Reduction Agency
  • Electronics and Telecommunications Research Institute
  • Institute for Information and Communications Technology Planning and Evaluation
  • United States Department of Energy