Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random Access Memory Studied via Electrically Detected Magnetic Resonance

Document Details

Document Type
Pub Defense Publication
Publication Date
May 01, 2018
Source ID
10.1109/tns.2018.2820907

Entities

People

  • D. Veksler
  • David Nminibapiel
  • Duane J McCrory
  • Jason P Campbell
  • Jason T. Ryan
  • Patrick M. Lenahan

Organizations

  • Defense Threat Reduction Agency