The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2019
- Source ID
- 10.1109/tns.2018.2886577
Entities
People
- Adilson S. Cardoso
- Adrian Ildefonso
- Ani Khachatrian
- Anup P. Omprakash
- Dale McMorrow
- George N. Tzintzarov
- Jeffrey A. Babcock
- Jeffrey H. Warner
- John D. Cressler
- Rajarshi Mukhopadhyay
- S. Büchner
- Zachary E. Fleetwood
Organizations
- Defense Threat Reduction Agency
- Texas Instruments