Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2020
Source ID
10.1109/tns.2019.2957028

Entities

People

  • A. Paccagnella
  • Andrew O'Hara
  • Daniel M. Fleetwood
  • Dimitri Linten
  • En Xia Zhang
  • Mariia Gorchichko
  • Nadine Collaert
  • Niamh Waldron
  • Robert A. Reed
  • Ronald D. Schrimpf
  • Simeng Zhao
  • Simone Gerardin
  • Sokrates T. Pantelides
  • Stefano Bonaldo
  • V. Putcha

Organizations

  • Air Force Research Laboratory
  • Defense Threat Reduction Agency
  • Vanderbilt University