Total-Ionizing-Dose Effects on InGaAs FinFETs With Modified Gate-stack

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2020
Source ID
10.1109/tns.2019.2960253

Entities

People

  • A. Paccagnella
  • Daniel M. Fleetwood
  • Dimitri Linten
  • En Xia Zhang
  • Nadine Collaert
  • Niamh Waldron
  • Pengfei Wang
  • Robert A. Reed
  • Ronald D. Schrimpf
  • Simeng Zhao
  • Simone Gerardin
  • Stefano Bonaldo
  • V. Putcha

Organizations

  • Air Force Office of Scientific Research