Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2Gate Dielectrics

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2020
Source ID
10.1109/tns.2019.2960815

Entities

People

  • Chundong Liang
  • Daniel M. Fleetwood
  • Dawei Yan
  • Dimitri Linten
  • En Xia Zhang
  • Huiqi Gong
  • Mariia Gorchichko
  • Pan Wang
  • Robert A. Reed
  • Ronald D. Schrimpf
  • Rong Jiang
  • Simeng Zhao
  • Yanrong Cao

Organizations

  • Defense Threat Reduction Agency
  • National Natural Science Foundation of China