Total-Ionizing-Dose Effects in InGaAs MOSFETs With High-k Gate Dielectrics and InP Substrates

Document Details

Document Type
Pub Defense Publication
Publication Date
Jul 01, 2020
Source ID
10.1109/tns.2019.2963340

Entities

People

  • A. Paccagnella
  • B. Parvais
  • Daniel M. Fleetwood
  • Dimitri Linten
  • En Xia Zhang
  • Robert A. Reed
  • Ronald D. Schrimpf
  • Simeng Zhao
  • Simone Gerardin
  • Stefano Bonaldo
  • V. Putcha

Organizations

  • Air Force Office of Scientific Research
  • Defense Threat Reduction Agency