Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs

Document Details

Document Type
Pub Defense Publication
Publication Date
Mar 01, 2022
Source ID
10.1109/tns.2022.3144204

Entities

People

  • Daniel M. Fleetwood
  • Dimitri Linten
  • En Xia Zhang
  • Jerome Mitard
  • K. Li
  • M. W. Rony
  • Mahmud Reaz
  • Robert A. Reed
  • Ronald D. Schrimpf
  • Shintaro Toguchi
  • Xuyi Luo

Organizations

  • Air Force Office of Scientific Research
  • Air Force Research Laboratory
  • Interuniversity Microelectronics Centre
  • Vanderbilt University