Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide

Document Details

Document Type
Pub Defense Publication
Publication Date
Apr 01, 2023
Source ID
10.1109/tns.2022.3227941

Entities

People

  • A. Arreghini
  • Daniel M. Fleetwood
  • Dimitri Linten
  • En Xia Zhang
  • G. Van den bosch
  • Isabella Wynocker
  • Jingchen Cao
  • Joao Bastos
  • M. Rosmeulen
  • Michael L. Alles
  • Robert A. Reed
  • Ronald D. Schrimpf

Organizations

  • Air Force Office of Scientific Research
  • Defense Threat Reduction Agency
  • Interuniversity Microelectronics Centre
  • Vanderbilt University