Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics

Document Details

Document Type
Pub Defense Publication
Publication Date
Apr 01, 2023
Source ID
10.1109/tns.2023.3239844

Entities

People

  • Anne Jourdain
  • Daniel M. Fleetwood
  • En Xia Zhang
  • Gaspard Hiblot
  • K. Li
  • M. W. Rony
  • Mariia Gorchichko
  • Michael L. Alles
  • Robert A. Reed
  • Ronald D. Schrimpf
  • Stefaan Van Huylenbroeck
  • Xuyi Luo

Organizations

  • Air Force Office of Scientific Research
  • Defense Threat Reduction Agency
  • Interuniversity Microelectronics Centre
  • Vanderbilt University