Total-Ionizing-Dose Effects and Low-Frequency Noise in N-Type Carbon Nanotube Field-Effect Transistors With HfO₂ Gate Dielectrics
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 01, 2023
- Source ID
- 10.1109/tns.2023.3242644
Entities
People
- Andrew M. Aaron
- Bharat Bhuva
- Daniel M. Fleetwood
- En Xia Zhang
- J. L. Davidson
- J. S. Kauppila
- L. W. Massengill
- Michael L. Alles
- Patrick K. Darmawi-Iskandar
Organizations
- Defense Advanced Research Projects Agency
- Vanderbilt University