Electrothermal Simulation-Based Comparison of 4H-SiC p-i-n, Schottky, and JBS Diodes Under High Current Density Pulsed Operation
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2017
- Source ID
- 10.1109/tps.2016.2636214
Entities
People
- Aderinto A. Ogunniyi
- Bejoy N. Pushpakaran
- Stephen Bayne
Organizations
- United States Army Research Laboratory