Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window

Document Details

Document Type
Pub Defense Publication
Publication Date
Jun 12, 2022
Source ID
10.1109/vlsitechnologyandcir46769.2022.9830172

Entities

People

  • Halid Mulaosmanovic
  • Hussam Amrouch
  • Kai Ni
  • Rajiv Joshi
  • Stefan Duenkel
  • Steven Soss
  • Sven Beyer
  • Swetaki Chatterjee
  • Vijaykrishnan Narayanan
  • Yi Xiao
  • Yogesh S. Chauhan
  • Zhouhang Jiang

Organizations

  • Army Research Office
  • GlobalFoundries
  • Indian Institute of Technology Kanpur
  • International Business Machines Corporation (Armonk, NY)
  • Office of Basic Energy Sciences
  • Office of Science
  • Pennsylvania State University
  • Rochester Institute of Technology
  • United States Department of Energy
  • University of Stuttgart