High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 07, 2022
- Source ID
- 10.1109/wipda56483.2022.9955304
Entities
People
- John Niroula
- Mengyang Yuan
- Mohamed Fadil Isamotu
- Nadim Chowdhury
- Nitul S. Rajput
- Qingyun Xie
- Tomás Palacios
Organizations
- Air Force Office of Scientific Research
- Lockheed Martin
- Massachusetts Institute of Technology
- National Aeronautics and Space Administration
- Technology Innovation Institute
- University of Engineering and Technology, Peshawar