Investigation of the crystallization behavior of laser‐irradiated EXTREME pattern by Raman spectroscopy
Abstract
This paper investigates the crystallization behavior of a Ge2Sb2Se4Te1 (GSST) chalcogenide phase change material film using Raman spectroscopy. The properties of as‐deposited, thermally treated, and laser‐written GSST films are investigated. A single mask exposure laser excitation process was developed using a spatial light modulator with an 800 nm femto‐second laser to generate a direct laser‐written EXTREME pattern. The correlation between the laser‐imprinted EXTREME pattern and the phase change transition from amorphous to crystalline state of the GSST film was characterized using Raman spectroscopy.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 12, 2019
- Source ID
- 10.1111/ijag.14560
Entities
People
- Clara Rivero‐Baleine
- Megan Driggers
Organizations
- Defense Advanced Research Projects Agency
- Lockheed Martin
- Massachusetts Institute of Technology
- United States Department of Defense
- University of Central Florida