The Conversion of Perhydropolysilazane into SiON Films Characterized by X‐Ray Photoelectron Spectroscopy

Abstract

Silicon oxynitride (SiON) films of ~1 μm thickness were made by dip coating and subsequent thermal treatment of a preceramic polymer: perhydropolysilazane (PHPS). X‐ray photoelectron spectroscopy was used to analyze the surface of a series of SiON films annealed in air between room temperature and 800°C. Results reveal that the progressive changes in the bonding states of silicon, oxygen, and nitrogen due to different degrees of annealing lead to a systematic evolution of atomic ratios of the films. It is shown that PHPS forms a unique amorphous SiOxNy material upon annealing in air up to 800°C with evolving compositions, instead of a mixture of Si3N4 and SiO2.

Document Details

Document Type
Pub Defense Publication
Publication Date
Nov 05, 2012
Source ID
10.1111/jace.12045

Entities

People

  • Fumio S. Ohuchi
  • Kaishi Wang
  • Rajendra K. Bordia
  • Xiaohao Zheng

Organizations

  • Air Force Office of Scientific Research
  • University of Washington

Tags

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Polymer Science and Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene