Effect of Ferroelectric Polarization on Ionic Transport and Resistance Degradation in BaTiO3 by Phase‐Field Approach
Abstract
We proposed a model to study the resistance degradation behavior of ferroelectric oxides in the presence of ferroelectric spontaneous polarization by combining the phase‐field model of ferroelectric domains and nonlinear diffusion equations for ionic/electronic transport. We took into account the nonperiodic boundary conditions for solving the electrochemical transport equations and Ginzburg–Landau equations using the Chebyshev collocation algorithm. We considered a single domain structure relative to a thin film BaTiO3 single crystal orientated to the normal of the electrode plates (Ni) in a single parallel plate capacitor configuration. The capacitor was subjected to a dc bias of 0.5 V either along the polarization direction or opposite to the polarization direction at 25°C. It is shown that the polarization bound charges at the metal/ferroelectric interface play an important role in charge carrier transport and leakage current evolution in BaTiO3 capacitor.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 24, 2014
- Source ID
- 10.1111/jace.13162
Entities
People
- Clive A. Randall
- Jie Shen
- Long‐qing Chen
- Ye Cao
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- Pennsylvania State University
- Purdue University